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PTB20171

25 Watts, 935–960 MHz Cellular Radio RF Power Transistor

Ericsson  

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PTB 20171

25 Watts, 935–960 MHz

Cellular Radio RF Power Transistor

Description

The 20171 is a class AB, NPN, common emitter RF power transistor

intended for 24 Vdc operation from 935 to 960 MHz. Rated at 25

watts minimum output power, it may be used for both CW and PEP

applications. Ion implantation, nitride surface passivation and gold

metallization are used to ensure excellent device reliability. 100% lot

traceability is standard.

• 25 Watts, 935–960 MHz

• Class AB Characteristics

• Gold Metallization

• Silicon Nitride Passivated

Typical Output Power vs. Input Power

40

30

20

10

0

0

VCC = 24 V

ICQ = 150 mA

f = 960 MHz

1

2

3

4

5

Input Power (Watts)

Maximum Ratings

Parameter

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage (collector open)

Collector Current (continuous)

Total Device Dissipation at Tflange = 25°C

Above 25°C derate by

Storage Temperature Range

Thermal Resistance (Tflange = 70°C)

20171 LOT CODE

Package 20200

Symbol

VCER

VCBO

VEBO

IC

PD

TSTG

RθJC

Value

50

50

4.0

5.0

145

0.833

–40 to +150

1.2

Unit

Vdc

Vdc

Vdc

Adc

Watts

W/°C

°C

°C/W

1

9/28/98

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