DS2004SF26 Ver la hoja de datos (PDF) - Dynex Semiconductor

Número de pieza

componentes Descripción

Fabricante

DS2004SF26

Rectifier Diode

Dynex Semiconductor 

100000

Conditions:

Tj = 175˚C

VR = 100V

IF = 2000A

10000

IF

QS

dIF/dt

IRM

1000

Conditions:

Tj = 175˚C

VR = 100V

IF = 2000A

100

DS2004SF

1000

1.0

10

100

Rate of decay of forward current, dIF/dt - (A/µs)

Fig.4 Total stored charge

60

I2t = Î2 x t 4.2

2

50

3.8

10

0.1

1.0

10

100

Rate of decay of forward current, dIF/dt - (A/µs)

Fig.5 Maximum reverse recovery current

0.1

Anode side cooled

3.4

40

3.0

30

2.6

I2t

20

2.2

10

1.8

1

10 1 2 3 5 10 20 50

ms

Cycles at 50Hz

Duration

Fig.6 Surge (non-repetitive) forward current vs time

(with 50% VRRM at Tcase 175˚C)

www.dynexsemi.com

Double side cooled

0.01

0.001

0.001

0.01

Conduction Effective thermal resistance

Junction to case ˚C/W

d.c.

Halfwave

3 phase 120˚

6 phase 60˚

Double side

0.022

0.024

0.026

0.027

Single side

0.038

0.040

0.042

0.043

0.1

1.0

10

Time - (s)

Fig.7 Maximum (limit) transient thermal impedance -

junction to case

5/7

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