DCR1673SZ26 Ver la hoja de datos (PDF) - Dynex Semiconductor

Número de pieza

componentes Descripción

Fabricante

DCR1673SZ26

Phase Control Thyristor

Dynex Semiconductor 

DCR1673SZ

100000

Tj = 125˚C

IT = 3000A

100 Table gives pulse power PGM in Watts

Pulse Width Frequency Hz

µs

50 100 400

100

150 150 150

200

150 150 125

500

150 150 100

1ms

150 100 25

10ms

10

20 - -

100W

50W

20W

10W

VFGM

10000

1

Upper

Limit

99%

Tj

=

25˚C

VGD

Lower Limit 1%

1000

0.1

IGD

IFGM

1

10

100

0.001

0.01

0.1

1.0

10

Rate of decay of on-state current, dI/dt - (A/µs)

Gate trigger current, IGT - (A)

Fig.4 Recovered charge

Fig.5 Gate characteristics

200

0.1

150

30

Anode side cooled

0.01

Double side cooled

100

20

0.001

0.0001

0.001

0.01

Conduction

d.c.

Halfwave

3 phase 120˚

6 phase 60˚

Effective thermal resistance

Junction to case ˚C/W

Double side

0.0065

0.0072

0.0073

0.0076

Anode side

0.0130

0.0137

0.0138

0.0141

0.1

1

10

100

Time - (s)

Fig.6 Transient thermal impedance - junction to case

6/8

I2t

50

10

0

0

1

10 1

5 10

50

ms

Cycles at 50Hz

Duration

Fig.7 Surge (non-repetitive) on-state current vs time (with

50% VRRM at Tcase = 125˚C)

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