DCR1673SZ27 Ver la hoja de datos (PDF) - Dynex Semiconductor

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Fabricante

DCR1673SZ27

Phase Control Thyristor

Dynex Semiconductor 

DCR1673SZ

DYNAMIC CHARACTERISTICS

Symbol

Parameter

Conditions

Typ. Max. Units

IRRM/IDRM Peak reverse and off-state current

At VRRM/VDRM, Tcase = 125oC

-

500 mA

dV/dt

Maximum linear rate of rise of off-state voltage To 67% V T = 125oC

DRM j

-

1000 V/µs

dI/dt Rate of rise of on-state current

From 67% VDRM to 1100A Repetitive 50Hz

-

Gate source 1A

t

r

=

0.5µs,

T

j

=

125oC

Non-repetitive -

250 A/µs

500 A/µs

VT(TO)

Threshold voltage

At Tvj = 125oC

-

0.82 V

rT

On-state slope resistance

tgd

Delay time

IL

Latching current

At Tvj = 125oC

VD = 67% VDRM, Gate source 20V, 10Ω

tr = 0.5µs, Tj = 25oC

Tj = 25oC, VD = 5V

- 0.076 mΩ

1.0 1.5

µs

150 750 mA

IH

Holding current

Tj = 25oC, Rg-k = ∞

40 200 mA

GATE TRIGGER CHARACTERISTICS AND RATINGS

Symbol

Parameter

Conditions

V

GT

IGT

VGD

VFGM

VFGN

V

RGM

IFGM

P

GM

PG(AV)

Gate trigger voltage

Gate trigger current

Gate non-trigger voltage

Peak forward gate voltage

Peak forward gate voltage

Peak reverse gate voltage

Peak forward gate current

Peak gate power

Mean gate power

V = 5V, T = 25oC

DRM

case

V = 5V, T = 25oC

DRM

case

At VDRM Tcase = 125oC

Anode positive with respect to cathode

Anode negative with respect to cathode

Anode positive with respect to cathode

See table, gate characteristics curve

Max. Units

3.5

V

500 mA

0.25 V

30

V

0.25 V

5

V

30

A

150 W

10

W

4/8

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