TV1825FKR Ver la hoja de datos (PDF) - Dynex Semiconductor

Número de pieza

componentes Descripción

Fabricante

TV1825FKR

Fast Recovery Diode

Dynex Semiconductor 

10000

1000

100

IF

∫ 50µs

QS = 0

QS

Conditions:

Tj = 150˚C,

VR = 100V

tp = 1ms

dIR/dt

IRR

IF = 1000A

IF = 750A

IF = 200A IF = 500A

IF = 100A

TV18..F

10

1

10

100

1000

Rate of rise of reverse current dIR/dt - (A/µs)

Fig.4 Recovered charge

10000

Conditions:

Tj = 150˚C,

VR = 100V

100

IF = 1000A

IF = 750A

IF = 500A

IF = 200A

IF = 100A

10

1

1

10

100

1000

Rate of rise of reverse current dIR/dt - (A/µs)

Fig.5 Typical reverse recovery current vs rate of rise of reverse current

5/8

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