TV1825FKR Ver la hoja de datos (PDF) - Dynex Semiconductor

Número de pieza

componentes Descripción

Fabricante

TV1825FKR

Fast Recovery Diode

Dynex Semiconductor 

TV18..F

SURGE RATINGS

Symbol

Parameter

I

Surge (non-repetitive) forward current

FSM

I2t

I2t for fusing

IFSM

Surge (non-repetitive) forward current

I2t

I2t for fusing

Conditions

10ms half sine; with 0% VRRM, Tj = 150oC

10ms half sine; with 50% VRRM, Tj = 150oC

Max. Units

3.5

kA

61 x 103 A2s

2.8

kA

39.2x 103 A2s

THERMAL AND MECHANICAL DATA

Symbol

Parameter

Rth(j-c)

Rth(c-h)

Thermal resistance - junction to case

Thermal resistance - case to heatsink

Tvj

Virtual junction temperature

Tstg

Storage temperature range

-

Mounting torque

CHARACTERISTICS

Symbol

Parameter

V

Forward voltage

FM

IRRM

Peak reverse current

t

rr

Reverse recovery time

Q

RA1

Recovered charge (50% chord)

IRM

Reverse recovery current

K

Soft factor

VTO

rT

V

FRM

Threshold voltage

Slope resistance

Forward recovery voltage

Conditions

dc

Mounting torque 35.0Nm

with mounting compound

On-state (conducting)

Conditions

At 1000A peak, T = 25oC

case

At VRRM, Tcase = 150oC

I

F

=

1000A,

di /dt

RR

=

100A/µs

T = 150oC, V = 100V

case

R

At Tvj = 150oC

At Tvj = 150oC

di/dt

=

1000A/µs,

T

j

=

125oC

Min. Max. Units

-

0.16 oC/W

-

0.06 oC/W

-

150

oC

-55 175

oC

30.0 35.0 Nm

Typ. Max. Units

-

3.1

V

-

50 mA

-

3.2 µs

-

240 µC

-

160

A

1.3

-

-

-

1.64 V

-

1.54 mΩ

-

120

V

2/8

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