MP04HB910-28 Ver la hoja de datos (PDF) - Dynex Semiconductor
Número de pieza
componentes Descripción
Fabricante
MP04HB910-28 Datasheet PDF : 7 Pages
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MP04HB910
10000
Conditions:
Tj = 150˚C
VR = 100V
IF = 1000A
1000
Conditions:
Tj = 175˚C
VR = 100V
IF = 1000A
1000
100
100
0.1
IF
QS
dIF/dt
IRR
1.0
10
100
Rate of decay of on-state current dIF/dt - (A/µs)
Fig.5 Maximum stored charge
10
1.0
10
100
Rate of decay of forward current dIF/dt - (A/µs)
Fig.6 Maximum reverse recovery current
35
1.4
I2t = Î2 x t
30
2 1.3
25
1.2
20
1.1
15
1.0
I2t
10
0.9
5
0.8
0
0.7
1
10 1 2 3 5 10 20
50
ms
Cycles at 50Hz
Duration
Fig.7 Surge (non-repetitive) forward current vs time
(with 50% VRRM @ Tc - 150˚C)
0.06
0.05
0.04
0.03
0.02
0.01
0
0.001 0.01
0.1
1
10
Time - (Seconds)
100 1000
Fig.8 Transient thermal impedance - dc
4/7
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