MP04HB910-24 Ver la hoja de datos (PDF) - Dynex Semiconductor
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MP04HB910-24 Datasheet PDF : 7 Pages
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MP04HB910
CHARACTERISTICS
Symbol
Parameter
Conditions
Min. Max. Units
IRRM
Peak reverse current
QS
Total stored charge
IRR
Peak recovery current
At VRRM, Tcase = 150oC
I
F
=
1000A,
dI /dt
RR
=
3A/µs
Tcase = 150˚C, VR = 100V
-
50 mA
- 1600 µC
-
85
A
VTO
Threshold voltage. See Note 1.
At Tvj = 150˚C
-
0.7
V
rT
Slope resistance. See Note 1.
At Tvj = 150˚C
-
0.29 mΩ
Note 1: The data given in this datasheet with regard to forward voltage drop is the for the calculation of the power dissipation in
the semiconductor elements only. Forward voltage drops measured at the power terminals will be in excess of these figures due to
the impedance of the busbars from the terminals to the semiconductor.
CURVES
2500
Measured under pulse
conditions
2000
1500
1000
Tj = 150˚C
Tj = 25˚C
500
0
0.5
0.75
1.0
1.25
1.5
Instantaneous forward voltage VF - (V)
Fig.3 Maximum (limit) forward characteristics
2200
2000
1800
1600
1400
1200
1000
800
600
400
200
0
0
30°
60°
90°
120°
180°
DC
200 400 600 800 1000 1200 1400 1600 1800
Forward current, (Average, per arm) IF(AV) - (A)
Fig.4 Power dissipation curves
3/7
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