MP04HB910-26 Ver la hoja de datos (PDF) - Dynex Semiconductor

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Fabricante

MP04HB910-26

Dual Rectifier Diode Module

Dynex Semiconductor 

MP04HB910

ABSOLUTE MAXIMUM RATINGS - PER ARM

Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. This is a stress rating

only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this

specification is not implied. Exposure to Absolute Maximum Ratings for extended periods may affect device reliability.

Symbol

IF(AV)

Parameter

Mean forward current

IF(RMS)

RMS value

IFSM

Surge (non-repetitive) forward current

I2t

I2t for fusing

IFSM

Surge (non-repetitive) forward current

I2t

I2t for fusing

V

Isolation voltage

isol

Conditions

Max. Units

Half wave resistive load

Tcase = 75oC

915

A

Tcase = 85oC

830

A

Tcase = 100oC

695

A

Tcase = 75oC

1440

A

Tcase = 85oC

1305

A

Tcase = 100oC

1090

A

10ms half sine; Tj = 150oC

20

kA

VR = 0

2.0 x 106 A2s

10ms half sine; Tj = 150oC

VR = 50% VRRM

16

kA

1.28 x 106 A2s

Commoned terminals to base plate AC RMS, 1 min, 50Hz 3000

V

THERMAL AND MECHANICAL DATA

Symbol

Rth(j-c)

Parameter

Thermal resistance - junction to case

(per diode)

Tvj

Virtual junction temperature

T

Storage temperature range

stg

-

Screw torque

-

Weight (nominal)

Conditions

dc

Halfwave

3 Phase

Reverse (blocking)

-

Mounting

Electrical connections

-

Min. Max. Units

- 0.056 oC/W

-

0.060 oC/W

- 0.066 oC/W

-

150

oC

–40 150

oC

6 (53) - Nm (lb.ins)

- 12 (106) Nm (lb.ins)

- 1580 g

2/7

www.dynexsemi.com

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