AD5111 Ver la hoja de datos (PDF) - Analog Devices
Número de pieza
componentes Descripción
Fabricante
AD5111 Datasheet PDF : 24 Pages
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AD5111/AD5113/AD5115
Data Sheet
Parameter
DYNAMIC CHARACTERISTICS3, 10
Bandwidth
Total Harmonic Distortion
Symbol
BW
THD
VW Settling Time
ts
Resistor Noise Density
eN_WB
FLASH/EE MEMORY RELIABILITY3
Endurance11
Data Retention12
Test Conditions/Comments
Min
Code = half scale, −3 dB
RAB = 5 kΩ
RAB = 10 kΩ
RAB = 80 kΩ
VA = VDD/2 + 1 V rms, VB = VDD/2,
f = 1 kHz, code = half scale
RAB = 5 kΩ
RAB = 10 kΩ
RAB = 80 kΩ
VA = 5 V, VB = 0 V,
±0.5 LSB error band
RAB = 5 kΩ
RAB = 10 kΩ
RAB = 80 kΩ
Code = half scale, TA = 25°C,
f = 100 kHz
RAB = 5 kΩ
RAB = 10 kΩ
RAB = 80 kΩ
TA = 25°C
100
Typ1 Max
Unit
4
MHz
2
MHz
200
kHz
−75
dB
−80
dB
−85
dB
2.5
µs
3
µs
10
µs
7
nV/√Hz
9
nV/√Hz
20
nV/√Hz
1
MCycles
kCycles
50
Years
1 Typical values represent average readings at 25°C, VDD = 5 V, VSS = 0 V, and VLOGIC = 5 V.
2 R-INL is the deviation from an ideal value measured between the maximum resistance and the minimum resistance wiper positions. R-DNL measures the relative step
change from ideal between successive tap positions. The maximum wiper current is limited to 0.8 × VDD/RAB.
3 Guaranteed by design and characterization; not subject to production test.
4 INL and DNL are measured at VWB with the RDAC configured as a potentiometer divider similar to a voltage output DAC. VA = VDD and VB = 0 V. DNL specification limits
of ±1 LSB maximum are guaranteed monotonic operating conditions.
5 Resistor Terminal A, Resistor Terminal B, and Resistor Terminal W have no limitations on current direction with respect to each other.
6 CA is measured with VW = VA = 2.5 V, CB is measured with VW = VB = 2.5 V, and CW is measured with VA = VB = 2.5 V.
7 Different from operating current; supply current for NVM program lasts approximately 30 ms.
8 Different from operating current; supply current for NVM read lasts approximately 20 µs.
9 PDISS is calculated from (IDD × VDD).
10 All dynamic characteristics use VDD = 5.5 V and VLOGIC = 5 V.
11 Endurance is qualified at 100,000 cycles per JEDEC Standard 22, Method A117 and measured at 150°C.
12 Retention lifetime equivalent at junction temperature (TJ) is 125°C per JEDEC Standard 22, Method A117. Retention lifetime based on an activation energy of 1 eV
derates with junction temperature in the Flash/EE memory.
Rev. B | Page 6 of 24
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