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ACT5830 Ver la hoja de datos (PDF) - Active-Semi, Inc

Número de pieza
componentes Descripción
Fabricante
ACT5830
ACTIVE-SEMI
Active-Semi, Inc ACTIVE-SEMI
ACT5830 Datasheet PDF : 41 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
®
ACT5830
Rev 2, 20-Jan-11
ABSOLUTE MAXIMUM RATINGSc
PARAMETER
VALUE
UNIT
CHG_IN to G
t < 1ms and duty cycle <1%
Steady State
-0.3 to +7
V
-0.3 to +6
V
IN1, IN2, BAT, BATID, VICHG, SCL, SDA, PWR_HOLD, nRST, PWR_ON, nON,
nACOK, nENCHG, TCXO_EN, RX_EN, TX_EN, ODIx, ODx to G
-0.3 to +6
V
VP, SW, VBUCK to GP
-0.3 to +6
V
REF, HF_PWR to G
OUT1, OUT3, OUT5, OUT7 to G
OUT2, OUT4, OUT6, OUT8 to G
GP to G
-0.3 to VBAT + 0.3
-0.3 to VIN1 + 0.3
V
-0.3 to VIN2 + 0.3
V
-0.3 to +0.3
V
Junction to Ambient Thermal Resistance (θJA)
RMS Power Dissipation (TA = 70°C)d
30
°C/W
2.7
W
Operating Junction Temperature (TJ)
-40 to 150
°C
Operating Temperature Range (TA)
Store Temperature
-40 to 85
°C
-55 to 150
°C
Lead Temperature (Soldering, 10 sec)
300
°C
c: Do not exceed these limits to prevent damage to the device. Exposure to absolute maximum rating conditions for long periods may
affect device reliability.
d: Derate 33mW/°C above TA = 70°C.
Innovative PowerTM
-7-
ActivePMUTM is a trademark of Active-Semi.
I2CTM is a trademark of NXP.
www.active-semi.com
Copyright © 2010 Active-Semi, Inc.

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