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ACS102 Ver la hoja de datos (PDF) - STMicroelectronics

Número de pieza
componentes Descripción
Fabricante
ACS102
ST-Microelectronics
STMicroelectronics ST-Microelectronics
ACS102 Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
ACS102-5Tx
Fig. 5: Maximum power dissipation versus RMS
on-state current.
Fig. 6: RMS on-state current versus ambient
temperature.
P(W)
0.20
0.18
0.16
0.14
0.12
0.10
0.08
0.06
0.04
0.02
IT(RMS)(A)
0.00
0.00 0.02 0.04 0.06 0.08 0.10 0.12 0.14 0.16 0.18 0.20
IT(RMS)(A)
0.25
0.20
0.15
0.10
0.05
0.00
0
20 40
Tamb(°C)
60 80
100 120 140
Fig. 7-1: Relative variation of thermal impedance
junction to ambient versus pulse duration
(ACS102-5TA) (TO-92).
Zth(j-a) / Rth(j-a)
1.00
Fig. 7-2: Relative variation of thermal impedance
junction to ambient versus pulse duration (printed
circuit board FR4, e(Cu) = 35µm, S(Cu) = 40mm2
under “com” pins) (ACS102-5T1) (SO-8).
Zth(j-a) / Rth(j-a)
1.00
0.10
0.10
0.01
1E-3
1E-2
tp(s)
1E-1 1E+0
1E+1
1E+2 5E+2
0.01
1E-3
1E-2
tp(s)
1E-1 1E+0
1E+1
1E+2 5E+2
Fig. 8: Relative variation of gate trigger current
versus junction temperature.
IGT [Tj] / IGT [Tj=25°C]
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-40 -20 0
Tj(°C)
20 40 60 80 100 120 140
Fig. 9: Relative variation of holding and latching
current versus junction temperature.
IH,IL [Tj] / IH,IL [Tj=25°C]
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-40 -20 0 20
Tj(°C)
40 60
80 100 120 140
5/8

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