MCD161-22IO1 Ver la hoja de datos (PDF) - IXYS CORPORATION
Número de pieza
componentes Descripción
Fabricante
MCD161-22IO1 Datasheet PDF : 3 Pages
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MCC 161
MCD 161
6000
5000
A
ITSM4,000
IFSM
3000
2000
TVJ = 125°C
50 Hz
80% VRRM
TVJ = 45°C
1000
0
0.001
0.01
0.1 ms 1
t
Fig. 4: Surge overload current
ITSM, IFSM = f(t)
106
I2t
A2s
105
TVJ = 45°C
TVJ = 125°C
350
A
300 DC
ITAVM,
IFAVM250
200
180° sin
120° rect
150
60° rect
100
30° rect
50
104
1
s 10
t
Fig. 5: I2t versus time per diode
0
0
25 50 75 1°0C0 125
TC
Fig. 6: Max. forward current at case
temperature ITAVM/FAVM = f (TC,d)
400
3W60
Ptot
320
280
240
200
160
120
80
DC
180° sin
120° rect
60° rect
30° rect
RthKA K/W
0.1
0.2
0.3
0.5
0.8
1.5
2
40
0
0 50 100 150 2A00 250 0 25 50 75 10C0 125
IFAVM, ITAVM
TA
Fig. 7: Power dissipation vs. on-state current and ambient
temperature (per thyristor/diode)
2000
1W800
Ptot
1600
1400
1200
1000
RthKA K/W
0.02
0.04
0.06
0.1
0.15
0.20
0.30
800
600
400
200
0
0 100 200 300 400 A 0 25 50 75 1C00 125
IDAVM
TA
Fig. 8: Power dissipation vs. direct output current and
ambient temperature (three phase rectifier bridge)
0.3
K/W
0.2
ZthJC
0.1
30°
60°
120°
180°
DC
0.0
10-3
10-2
10-1
100
101
s
102
t
Fig. 9: Transient thermal impedance junction to case ZthjC
at various conduction angles
RthJC for various condition angles:
d
DC_
180°
120°
60°
30°
RthJC (K/W)
0.155
0.171
0.184
0.222
0.294
Constants for ZthJC calculation (DC):
i
Rthi (K/W)
ti (s)
1
0.012
2
0.008
3
0.03
4
0.073
5
0.032
0.00014
0.019
0.18
0.52
1.6
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