MP02HB130-18 Ver la hoja de datos (PDF) - Dynex Semiconductor
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MP02HB130-18 Datasheet PDF : 7 Pages
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MP02XX130 Series
DYNAMIC CHARACTERISTICS
Symbol
Parameter
Test Conditions
Min. Max. Units
I
Peak reverse current
RRM
At VRRM, Tj = 150˚C
-
30 mA
VTO
Threshold voltage
At Tvj = 150˚C. See note 1
-
1.1
V
rT
Forward slope resistance
At T = 150˚C. See note 1
vj
-
1.3 mΩ
Note 1: The data given in this datasheet with regard to forward voltage drop is for calculation of the power dissipation in the
semiconductor elements only. Forward voltage drops measured at the power terminals of the module will be in excess of these
figures due to the impedance of the busbar from the terminal to the semiconductor.
1000
Tj = 150˚C
800
600
400
200
0
0
1.0
2.0
3.0
4.0
Instantaneous forward voltage, VF - (V)
Fig. 3 Maximum (limit) forward characteristics
6000
24
5000
22
4000
20
18
3000
16
2000
I2t
14
1000
12
0
10
1
10 1 2 3 5 10 20 30 50
ms
cycles at 50Hz
Duration
Fig. 4 Surge (non-repetitive) forward current vs time
(With 50% VRRM at Tcase = 150˚C)
3/7
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