MP02HB130-25 Ver la hoja de datos (PDF) - Dynex Semiconductor
Número de pieza
componentes Descripción
Fabricante
MP02HB130-25 Datasheet PDF : 7 Pages
| |||
MP02XX130 Series
ABSOLUTE MAXIMUM RATINGS - PER ARM
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme
conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety
precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.
Symbol
Parameter
Test Conditions
Max. Units
IF(AV)
IF(RMS)
I
FSM
I2t
IFSM
I2t
V
isol
Mean forward current
Half wave resistive load
Tcase = 75˚C
130
A
T = 85˚C 116
A
case
RMS value
Tcase = 75˚C
204
A
Surge (non-repetitive) forward current
10ms half sine, Tj = 150˚C
2.2
kA
I2t for fusing
VR = 0
24.2x 103 A2s
Surge (non-repetitive) forward current
10ms half sine, T = 150˚C
j
1.76 kA
I2t for fusing
VR = 50% VDRM
15.49 x 103 A2s
Isolation voltage
Commoned terminals to base plate.
AC RMS, 1 min, 50Hz
3000
V
THERMAL AND MECHANICAL RATINGS
Symbol
Parameter
Rth(j-c)
Thermal resistance - junction to case
(per thyristor or diode)
Rth(c-hs)
Tvj
T
stg
-
Thermal resistance - case to heatsink
(per thyristor or diode)
Virtual junction temperature
Storage temperature range
Screw torque
-
Weight (nominal)
Test Conditions
dc
Half wave
3 Phase
Mounting torque = 6Nm
with mounting compound
Reverse (blocking)
-
Mounting - M6
Electrical connections - M6
-
Min. Max. Units
-
0.37 ˚C/kW
-
0.38 ˚C/kW
-
0.39 ˚C/kW
-
0.07 ˚C/kW
-
150
˚C
–40 150
˚C
- 6 (55) Nm (lb.ins)
- 5 (44) Nm (lb.ins)
-
350
g
2/7
www.dynexsemi.com
Share Link: 