DSF8025SG Ver la hoja de datos (PDF) - Dynex Semiconductor

Número de pieza

componentes Descripción

Fabricante

DSF8025SG

Fast Recovery Diode

Dynex Semiconductor 

1000

Conditions:

Tj = 150˚C,

VR = 100V

100

DSF8025SE / DSF8025SG

0.1

A

B

C

0.01

Anode side

cooled

Double side

cooled

A: IF = 2000A

B: IF = 1000A

C: IF = 200A

10

1

10

100

Rate of rise of reverse current dIR/dt - (A/µs)

Fig.7 Typical reverse recovery current vs rate of fall of

forward current

0.001

0.001

0.01

0.1

1.0

10

Time - (s)

Fig.8 Maximum (limit) transient thermal impedance -

junction to case - (˚C/W)

5/8

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