DSF8025SG24(2004) Ver la hoja de datos (PDF) - Dynex Semiconductor
Número de pieza
componentes Descripción
Fabricante
DSF8025SG24 Datasheet PDF : 8 Pages
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DSF8025SE / DSF8025SG
CURVES
3500
Measured under pulse conditions
3000
Tj = 25˚C
Tj = 150˚C
2500
2000
1500
1000
500
Measured under pulse conditions
Tj = 25˚C
Tj = 150˚C
400
300
200
100
500
0
1.0
2.0
3.0
4.0
Instantaneous forward voltage VF - (V)
Fig.2 Maximum (limit) forward characteristics
0
1.00
1.25
1.50
1.75
2.00
Instantaneous forward voltage VF - (V)
Fig.3 Maximum (limit) forward characteristics
250
VFRP
200
δy
150
δx
100
Current
waveform
Voltage
waveform
di = δy
dt δx
Tj = 125˚C limit
Tj = 25˚C limit
50
10000
IFM
tp = 1ms
dIR/dt
1000
QRA1
0.5x IRR
IRR
Conditions:
Tj = 150˚C,
VR = 100V
IF = 2000A
IF = 1000A
IF = 200A
0
0
500
1000
1500
2000
Rate of rise of forward current, dIF/dt - (A/µs)
Fig.5 Transient forward voltage vs rate of rise of
forward current
4/8
100
10
100
Rate of rise of reverse current dIR/dt - (A/µs)
Fig.6 Recovered charge
1000
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