DSF8025SG20(2004) Ver la hoja de datos (PDF) - Dynex Semiconductor

Número de pieza

componentes Descripción

Fabricante

DSF8025SG20
(Rev.:2004)

Fast Recovery Diode

Dynex Semiconductor 

DSF8025SE / DSF8025SG

CURRENT RATINGS

Symbol

Parameter

Double Side Cooled

IF(AV)

I

F(RMS)

Mean forward current

RMS value

IF

Continuous (direct) forward current

Single Side Cooled (Anode side)

I

F(AV)

IF(RMS)

IF

Mean forward current

RMS value

Continuous (direct) forward current

SURGE RATINGS

Symbol

Parameter

IFSM

Surge (non-repetitive) forward current

I2t

I2t for fusing

IFSM

Surge (non-repetitive) forward current

I2t

I2t for fusing

THERMAL AND MECHANICAL DATA

Symbol

Parameter

R

th(j-c)

Thermal resistance - junction to case

Rth(c-h) Thermal resistance - case to heatsink

Tvj

Virtual junction temperature

T

Storage temperature range

stg

-

Clamping force

2/8

Conditions

Half wave resistive load, Tcase = 65oC

Tcase = 65oC

T = 65oC

case

Half wave resistive load, Tcase = 65oC

Tcase = 65oC

Tcase = 65oC

Max. Units

650

A

1020

A

785

A

385

A

604

A

465

A

Conditions

10ms half sine; with 0% VRRM, Tj = 150oC

10ms half sine; with 50% V T = 150oC

RRM, j

Max. Units

7.5

kA

281 x 103 A2s

6.0

kA

180 x 103 A2s

Conditions

Double side cooled

dc

Single side cooled

Anode dc

Cathode dc

Clamping force 8.0kN

with mounting compound

Double side

Single side

Forward (conducting)

Min. Max. Units

- 0.047 oC/W

- 0.094 oC/W

- 0.094 oC/W

- 0.018 oC/W

- 0.036 oC/W

-

150

oC

-55 175

oC

7.0 9.0 kN

www.dynexsemi.com

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