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RMWD24001 Datasheet PDF : 7 Pages
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RMWD24001
21-26.5 GHz Driver Amplifier MMIC
Description
PRODUCT INFORMATION
The RMWD24001 is a 4-stage GaAs MMIC amplifier designed as a 21 to 26.5 GHz Driver Amplifier for use in point
to point radios, point to multi-point communications, LMDS, and other millimeter wave applications. In
conjunction with other Raytheon amplifiers, multipliers and mixers it forms part of a complete 23 and 26 GHz
transmit/receive chipset. The RMWD24001 utilizes Raytheon’s 0.25µm power PHEMT process and is sufficiently
versatile to serve in a variety of driver amplifier applications.
Features
4 mil substrate
Small-signal gain 23 dB (typ.)
1dB compressed Pout 17 dBm (typ.)
Voltage detector included to monitor Pout
Chip size 2.85 mm x 1.2 mm
Absolute
Maximum
Ratings
Parameter
Positive DC voltage (+4 V Typical)
Negative DC voltage
Simultaneous (Vd - Vg)
Positive DC Current
RF Input Power (from 50 Ω source)
Operating Baseplate Temperature
Storage Temperature Range
Thermal Resistance
(Channel to Backside)
Symbol
Vd
Vg
Vdg
ID
PIN
TC
Tstg
RJC
Value
+6
-2
8
345
+8
-30 to +85
-55 to +125
42
Unit
Volts
Volts
Volts
mA
dBm
°C
°C
°C/W
Electrical
Characteristics
(At 25°C), 50 Ω system,
Vd=+4 V, Quiescent
Current Idq=240 mA
Parameter
Min Typ Max Unit
Frequency Range
21
Gate Supply Voltage (Vg)1
Gain Small Signal
20
at Pin=-12 dBm
Gain Variation vs. Frequency
Gain at 1dB Compression
Power Output at P1dB
13
(Pin=-6 dBm)
Drain Current
at Pin=-12 dBm
26.5 GHz
-0.4
V
23
dB
3
dB
22
dB
17
dBm
240
mA
Parameter
Drain Current
at 1dB Compression
Input Return Loss
(Pin=-12 dBm)
Output Return Loss
(Pin=-12 dBm)
OIP3
Noise Figure
Detector Voltage
Min Typ
265
Max Unit
mA
10
dB
12
dB
TBD
dBm
TBD
dB
TBD
V
www.raytheon.com/micro
Note:
1. Typical range of the negative gate voltages is -0.7 to -0.1V to set typical Idq of 240 mA.
Characteristic performance data and specifications are subject to change without notice.
Revised March 14, 2001
Page 1
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
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