SDM9433 Ver la hoja de datos (PDF) - Samhop Mircroelectronics

Número de pieza

componentes Descripción

Fabricante

SDM9433

P-Channel Enhancement Mode MOSFET

Samhop Mircroelectronics 

S DM9433

E LE CTR ICAL CHAR ACTE R IS TICS (TA=25 C unless otherwise noted)

P a ra meter

S ymbol Condition

DRAIN-SOURCE DIODE CHARACTERISTICS b

Min Typ C Max Unit

5

Diode Forward Voltage

VSD VGS = 0V, Is =-5.3A

-0.89 -1.2 V

Notes

a.Surface Mounted on FR 4 Board, t <=10sec.

b.P ulse Test:P ulse Width<=300us, Duty C ycle<= 2%.

c.Guaranteed by design, not subject to production testing.

25

20

-V GS =10,9,8,7,6,5,4,3V

15

10

-V G S =2V

5

0

0 0.5 1.0 1.5 2.0 2.5 3.0

-V DS , Drain-to-S ource Voltage (V )

F igure 1. Output C haracteris tics

20

-55 C

25 C

16

T j=125 C

12

8

4

0

0

0.5 1

1.5 2

2.5 3

-V G S , G ate-to-S ource Voltage (V )

F igure 2. Trans fer C haracteris tics

3000

2500

2000

1500

C is s

1000

C oss

500

C rss

0

0

5

10

15

20

-V DS , Drain-to S ource Voltage (V )

F igure 3. C apacitance

1.6

V G S =-4.5V

1.4 ID=-5.1A

1.2

1.0

0.8

0.6

0.4

-50

-25 0 25 50 75 100 125

T j( C )

T j, J unction T emperature ( C )

F igure 4. On-R es is tance Variation with

Te mpe ra ture

3

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