9N95(2012) Ver la hoja de datos (PDF) - Unisonic Technologies

Número de pieza

componentes Descripción

Fabricante

9N95
(Rev.:2012)

9A, 950V N-CHANNEL POWER MOSFET

Unisonic Technologies 

9N95

„ ELECTRICAL CHARACTERISTICS(Cont.)

PARAMETER

SYMBOL

TEST CONDITIONS

DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS

Drain-Source Diode Forward Voltage

VSD

VGS = 0 V, IS = 9.0 A

Maximum Continuous Drain-Source Diode

Forward Current

IS

Maximum Pulsed Drain-Source Diode

Forward Current

ISM

Reverse Recovery Time

trr

VGS = 0 V, IS = 9.0 A,

Reverse Recovery Charge

QRR

dIF / dt =100 A/μs (Note 1)

Notes: 1. Pulse Test : Pulse width≤300μs, Duty cycle≤2%

2. Essentially independent of operating temperature

Power MOSFET

MIN TYP MAX UNIT

1.4 V

9.0 A

36 A

550

ns

6.5

μC

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

3 of 6

QW-R502-721.A

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