8N65L-T2Q-T Ver la hoja de datos (PDF) - Unisonic Technologies
Número de pieza
componentes Descripción
Fabricante
8N65L-T2Q-T Datasheet PDF : 8 Pages
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8N65
TYPICAL CHARACTERISTICS(Cont.)
Breakdown Voltage Variation vs.
Temperature
1.2
1.1
1.0
0.9
0.8
-100
Note:
1. VGS=0V
2. ID=250µA
-50 0 50 100 150 200
Junction Temperature, TJ (°C)
100
Maximum Safe Operating Area
Operation in This Area is Limited by RDS(on)
10µs
10
100µs
1ms
DC 10ms
1
Notes:
1. TJ=25°C
2. TJ=150°C
0.1 3. Single Pulse
1
10
100
1000
Drain-Source Voltage, VDS (V)
Transient Thermal Response Curve
1
D=0.5
D=0.2
D=0.1
0.1 D=0.05
0.02
0.01
0.01
Notes:
Single pulse 1. θJC (t) = 0.85°C/W Max.
2. Duty Factor, D=t1/t2
3. TJM-TC=PDM×θJC (t)
10-5 10-4 10-3 10-2 10-1 100 101
Square Wave Pulse Duration, t1 (sec)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
Power MOSFET
On-Resistance Junction Temperature
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
Note:
1. VGS=10V
2. ID=4A
-50 0 50 100 150 200
Junction Temperature, TJ (°C)
Maximum Drain Current vs. Case
10
Temperature
8
6
4
2
0
25 50 75 100 125 150
Case Temperature, TC (°C)
7 of 8
QW-R502-591.C
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