HGT1S20N35G3VL Ver la hoja de datos (PDF) - Fairchild Semiconductor
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componentes Descripción
Fabricante
HGT1S20N35G3VL Datasheet PDF : 8 Pages
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HGTP20N35G3VL, HGT1S20N35G3VL, HGT1S20N35G3VLS
Typical Performance Curves (Continued)
105
104
VECS = 20V
103
102
101
VCES = 250V
100
10-1
+25
+50
+75
+100
+125 +150
TJ, JUNCTION TEMPERATURE (oC)
+175
FIGURE 9. LEAKAGE CURRENT AS A FUNCTION OF
JUNCTION TEMPERATURE
45
40
35
30
25
20
15
10
5
0
+25oC
VGE = 5V
+175oC
2
4
6
8
10
INDUCTANCE (mH)
18
VCL= 300V, RGE = 25Ω, VGE = 5V, L= 550µH
16
ICE = 6A, RL= 50Ω
14
ICE =10A, RL= 30Ω
12
ICE =15A, RL= 20Ω
10
+25
+50
+75
+100 +125 +150
TJ, JUNCTION TEMPERATURE (oC)
+175
FIGURE 10. TURN-OFF TIME AS A FUNCTION OF
JUNCTION TEMPERATURE
1200
1000
800
+25oC
VGE = 5V
600
400
+175oC
200
0
2
4
6
8
10
INDUCTANCE (mH)
FIGURE 11. SELF CLAMPED INDUCTIVE SWITCHING
CURRENT AS A FUNCTION OF INDUCTANCE
FIGURE 12. SELF CLAMPED INDUCTIVELY SWITCHING
ENERGY AS A FUNCTION OF INDUCTANCE
©2001 Fairchild Semiconductor Corporation
HGTP20N35G3VL, HGT1S20N35G3VL, HGT1S20N35G3VLS Rev. B
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