BCR20AM Ver la hoja de datos (PDF) - MITSUBISHI ELECTRIC
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BCR20AM Datasheet PDF : 5 Pages
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MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR20AM
MEDIUM POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
BREAKOVER VOLTAGE VS.
RATE OF RISE OF
OFF-STATE VOLTAGE
160
TYPICAL EXAMPLE
140
Tj = 125°C
120
III QUADRANT
100
80
60
I QUADRANT
40
20
0
101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104
RATE OF RISE OF OFF-STATE VOLTAGE (V/µs)
GATE TRIGGER CURRENT VS.
GATE CURRENT PULSE WIDTH
103
TYPICAL EXAMPLE
7
5
4
3
2
102
7
5
4
3
2
101100 2 3 4 5 7 101 2 3 4 5 7 102
GATE TRIGGER PULSE WIDTH (µs)
COMMUTATION CHARACTERISTICS
102
7 MINIMUM
5 CHARAC-
III QUADRANT
3 TERISTICS
2 VALUE
101
7
5
3
2
TYPICAL
EXAMPLE
100 Tj = 125°C
7
5
IT = 4A
3 τ = 500µs
2 VD = 200V
f = 3Hz
10–1100 2 3 5 7 101
I QUADRANT
2 3 5 7 102 2 3
5 7 103
RATE OF DECAY OF ON-STATE
COMMUTATING CURRENT (A /ms)
GATE TRIGGER CHARACTERISTICS TEST CIRCUITS
6Ω
6Ω
6V
A
6V
A
330Ω
330Ω
V
V
TEST PROCEDURE
6Ω
TEST PROCEDURE
6V
A
330Ω
V
TEST PROCEDURE
Feb.1999
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