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74HC3G07DC

Buffer with open-drain outputs

Philips Electronics 

Philips Semiconductors

Buffer with open-drain outputs

Product specification

74HC3G07; 74HCT3G07

DC CHARACTERISTICS

Type 74HC3G07

At recommended operating conditions; voltages are referenced to GND (ground = 0 V).

SYMBOL

PARAMETER

TEST CONDITIONS

OTHER

VCC (V)

MIN.

Tamb = −40 to +85 °C

VIH

HIGH-level input voltage

2.0

1.5

4.5

3.15

6.0

4.2

VIL

LOW-level input voltage

2.0

−

4.5

−

6.0

−

VOL

LOW-level output voltage VI = VIH or VIL

IO = 20 µA

2.0

−

IO = 20 µA

4.5

−

IO = 20 µA

6.0

−

IO = 4.0 mA

4.5

−

IO = 5.2 mA

6.0

−

ILI

input leakage current

VI = VCC or GND

6.0

−

IOZ

3-state output OFF current VI = VIH or VIL;

VO = VCC or GND

6.0

−

ICC

quiescent supply current VI = VCC or GND; IO = 0 6.0

−

Tamb = −40 to +125 °C

VIH

HIGH-level input voltage

2.0

1.5

4.5

3.15

6.0

4.2

VIL

LOW-level input voltage

2.0

−

4.5

−

6.0

−

VOL

LOW-level output voltage VI = VIH or VIL

IO = 20 µA

2.0

−

IO = 20 µA

4.5

−

IO = 20 µA

6.0

−

IO = 4.0 mA

4.5

−

IO = 5.2 mA

6.0

−

ILI

input leakage current

VI = VCC or GND

6.0

−

IOZ

3-state output OFF current VI = VIH or VIL;

VO = VCC or GND

6.0

−

ICC

quiescent supply current VI = VCC or GND; IO = 0 6.0

−

TYP.(1) MAX. UNIT

1.2

−

V

2.4

−

V

3.2

−

V

0.8

0.5

V

2.1

1.35 V

2.8

1.8

V

0

0.1

V

0

0.1

V

0

0.1

V

0.15 0.33 V

0.16 0.33 V

−

±1.0

µA

−

±5.0

µA

−

10

µA

−

−

V

−

−

V

−

−

V

−

0.5

V

−

1.35 V

−

1.8

V

−

0.1

V

−

0.1

V

−

0.1

V

−

0.4

V

−

0.4

V

−

±1.0

µA

−

±10

µA

−

20

µA

Note

1. All typical values are measured at Tamb = 25 °C.

2003 Oct 15

6

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