74HC2G125 Ver la hoja de datos (PDF) - Philips Electronics
Número de pieza
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Fabricante
74HC2G125 Datasheet PDF : 20 Pages
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Philips Semiconductors
Dual buffer/line driver; 3-state
Product specification
74HC2G125; 74HCT2G125
FEATURES
• Wide supply voltage range from 2.0 to 6.0 V
• Symmetrical output impedance
• High noise immunity
• Low power dissipation
• Balanced propagation delays
• Very small 8 pins package
• Output capability: bus driver
• ESD protection:
HBM EIA/JESD22-A114-A exceeds 2000 V
MM EIA/JESD22-A115-A exceeds 200 V.
• Specified from −40 to +85 °C and −40 to +125 °C.
DESCRIPTION
The 74HC2G/HCT2G125 is a high-speed Si-gate CMOS
device.
The 74HC2G/HCT2G125 provides one non-inverting
buffer/line driver with 3-state output. The 3-state output is
controlled by the output enable input pin (OE). A HIGH at
pin OE causes the output to assume a high-impedance
OFF-state.
The bus driver output currents are equal compared to the
74HC/HCT125.
QUICK REFERENCE DATA
GND = 0 V; Tamb = 25 °C; tr = tf ≤ 6.0 ns.
SYMBOL
PARAMETER
CONDITIONS
tPHL/tPLH
CI
CO
CPD
propagation delay nA to nY
input capacitance
output capacitance
power dissipation capacitance per
buffer
CL = 15 pF; VCC = 5 V
output enabled; notes 1 and 2
output disabled; notes 1 and 2
Notes
1. CPD is used to determine the dynamic power dissipation (PD in µW).
PD = CPD × VCC2 × fi × N + Σ(CL × VCC2 × fo) where:
fi = input frequency in MHz;
fo = output frequency in MHz;
CL = output load capacitance in pF;
VCC = supply voltage in Volts;
N = total switching outputs;
Σ(CL × VCC2 × fo) = sum of the outputs.
2. For 74HC2G125 the condition is VI = GND to VCC.
For 74HCT2G125 the condition is VI = GND to VCC − 1.5 V.
TYPICAL
HC2G
10
1.0
1.5
11
1
HCT2G
12
1.0
1.5
11
1
UNIT
ns
pF
pF
pF
pF
2003 Mar 03
2
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