74AHCT1G32 Ver la hoja de datos (PDF) - Philips Electronics

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Fabricante

74AHCT1G32

2-input OR gate

Philips Electronics 

Philips Semiconductors

2-input OR gate

Product specification

74AHC1G32; 74AHCT1G32

FEATURES

• Symmetrical output impedance

• High noise immunity

• ESD protection:

– HBM EIA/JESD22-A114-A exceeds 2000 V

– MM EIA/JESD22-A115-A exceeds 200 V

– CDM EIA/JESD22-C101 exceeds 1000 V.

• Low power dissipation

• Balanced propagation delays

• Multiple very small 5-pin packages

• Output capability: standard

• Specified from −40 to +125 °C.

DESCRIPTION

The 74AHC1G/AHCT1G32 is a high-speed Si-gate CMOS

device.

The 74AHC1G/AHCT1G32 provides the 2-input

OR function.

QUICK REFERENCE DATA

GND = 0 V; Tamb = 25 °C; tr = tf ≤ 3.0 ns.

SYMBOL

PARAMETER

CONDITIONS

tPHL/tPLH

CI

CPD

propagation delay A and B to Y CL = 15 pF; VCC = 5 V

input capacitance

power dissipation capacitance CL = 50 pF; f = 1 MHz;

notes 1 and 2

Notes

1. CPD is used to determine the dynamic power dissipation (PD in µW).

PD = CPD × VCC2 × fi + (CL × VCC2 × fo) where:

fi = input frequency in MHz;

fo = output frequency in MHz;

CL = output load capacitance in pF;

VCC = supply voltage in Volts.

2. VI = GND to VCC.

TYPICAL

AHC1G

3.2

1.5

16

AHCT1G

3.3

1.5

17

UNIT

ns

pF

pF

2002 Jun 05

2

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