72CPQ030-N3(2019) Ver la hoja de datos (PDF) - Vishay Semiconductors
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72CPQ030-N3 Datasheet PDF : 7 Pages
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VS-72CPQ030-N3
Vishay Semiconductors
High Performance Schottky Rectifier, 2 x 35 A
Base
common
cathode
2
1
2
3
TO-247AC 3L
1
3
Anode
2 Anode
Common
cathode
PRIMARY CHARACTERISTICS
IF(AV)
VR
VF at IF
IRM max.
TJ max.
EAS
Package
2 x 35 A
30 V
0.43 V
450 mA at 125 °C
150 °C
27 mJ
TO-247AC 3L
Circuit configuration
Common cathode
FEATURES
• 150 °C TJ operation
• Low forward voltage drop
• High frequency operation
• High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
• Guard ring for enhanced ruggedness and long term
reliability
• Designed and qualified according to JEDEC®-JESD 47
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
The VS-72CPQ030... center tap Schottky rectifier series has
been optimized for low reverse leakage at high temperature.
The proprietary barrier technology allows for reliable
operation up to 150 °C junction temperature. Typical
applications are in switching power supplies, converters,
freewheeling diodes, and reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
IF(AV)
VRRM
IFSM
VF
TJ
Rectangular waveform
tp = 5 μs sine
35 Apk, TJ = 125 °C (per leg)
Range
VALUES
70
30
2180
0.43
-55 to +150
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
VR
VRWM
VS-72CPQ030-N3
30
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average forward per leg
current, see fig. 5
per device
IF(AV)
Maximum peak one cycle non-repetitive
surge current per leg, see fig. 7
IFSM
Non-repetitive avalanche energy per leg
EAS
Repetitive avalanche current per leg
IAR
TEST CONDITIONS
50 % duty cycle at TC = 125 °C, rectangular waveform
5 μs sine or 3 μs rect. pulse Following any rated load
condition and with rated
10 ms sine or 6 ms rect. pulse VRRM applied
TJ = 25 °C, IAS = 6 A, L = 1.5 mH
Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical
VALUES
35
70
2180
600
27
6
UNITS
A
mJ
A
Revision: 02-Apr-2019
1
Document Number: 96463
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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