DS2102SY16 Ver la hoja de datos (PDF) - Dynex Semiconductor

Número de pieza

componentes Descripción

Fabricante

DS2102SY16

Rectifier Diode

Dynex Semiconductor 

DS2102SY

SURGE RATINGS

Symbol

Parameter

I

Surge (non-repetitive) forward current

FSM

I2t

I2t for fusing

IFSM

Surge (non-repetitive) forward current

I2t

I2t for fusing

Conditions

10ms half sine; T = 175oC

case

VR = 50% VRRM - 1/4 sine

10ms half sine; Tcase =175oC

VR = 0

Max. Units

80.0

kA

32 x 106 A2s

100.0

kA

50 x 106 A2s

THERMAL AND MECHANICAL DATA

Symbol

Parameter

R

th(j-c)

Thermal resistance - junction to case

Rth(c-h)

Thermal resistance - case to heatsink

Tvj

Virtual junction temperature

Tstg

Storage temperature range

-

Clamping force

Conditions

Double side cooled

dc

Single side cooled

Anode dc

Cathode dc

Clamping force 43.0kN

with mounting compound

Double side

Single side

Forward (conducting)

Reverse (blocking)

Min. Max. Units

- 0.0095 oC/W

- 0.019 oC/W

- 0.019 oC/W

- 0.002 oC/W

- 0.004 oC/W

-

200

oC

-

175

oC

-55 175

oC

38.0 47.0 kN

3/7

www.dynexsemi.com

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