MP03/130-16 Ver la hoja de datos (PDF) - Dynex Semiconductor

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MP03/130-16

Phase Control Dual SCR, SCR/Diode Modules

Dynex Semiconductor 

MP03 XXX 130 Series

SURGE RATINGS - PER ARM

Symbol

ITSM

I2t

Parameter

Conditions

Surge (non-repetitive) on-state current

I2t for fusing

10ms half sine; VR = 0

T = 125oC

j

V = 50% V

R

RRM

10ms half sine;

V =0

R

Tj = 125oC

V = 50% V

R

RRM

Max. Units

4000

A

3200

A

80000 A2s

51200 A2s

THERMAL & MECHANICAL RATINGS

Symbol

R

th(j-c)

Rth(c-hs)

Tvj

Tsto

Visol

Parameter

Thermal resistance - junction to case

per Thyristor or Diode

Thermal resistance - case to heatsink

per Thyristor or Diode

Virtual junction temperature

Storage temperature range

Isolation voltage

Conditions

dc

halfwave

3 phase

Mounting torque = 5Nm

with mounting compound

Commoned terminals to base plate

AC RMS, 1min, 50Hz

Max.

0.21

0.22

0.23

Units

oC/W

oC/W

oC/W

0.05 oC/W

125

oC

-40 to 125 oC

2.5

kV

DYNAMIC CHARACTERISTICS

Symbol

Parameter

Conditions

VTM On-state voltage

At 450A, Tcase = 25oC - See Note 1

IRRM/IDRM Peak reverse and off-state current

At V /V , T = 125oC

RRM DRM j

dV/dt Linear rate of rise of off-state voltage To 60% VDRM Tj = 125oC

dI/dt Rate of rise of on-state current

From 67% VDRM to 400A Repetitive 50Hz

Gate source 20V, 20Ω

Rise time 0.5µs, Tj =125oC

VT(TO) Threshold voltage

At Tvj = 125oC - See Note 1

rT

On-state slope resistance

At T = 125oC - See Note 1

vj

* Higher dV/dt values available, contact factory for particular requirements.

Max.

1.90

30

200*

Units

V

mA

V/µs

100 A/µs

1.25

V

1.33

mΩ

Note 1: The data given in this datasheet with regard to forward voltage drop is for calculation of the power dissipation in the

semiconductor elements only. Forward voltage drops measured at the power terminals of the module will be in excess of these

figures due to the impedance of the busbar from the terminal to the semiconductor.

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