MCO450-20IO1(2017) Ver la hoja de datos (PDF) - IXYS CORPORATION
Número de pieza
componentes Descripción
Fabricante
MCO450-20IO1 Datasheet PDF : 6 Pages
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MCO450-20io1
Thyristor
14000
12000
10000
ITSM
8000
[A]
6000
4000
2000
50 Hz
80 % VRRM
TVJ = 45°C
TVJ = 140°C
107
VR = 0V
I2t
106
A2s
TVJ = 45°C
TVJ = 140°C
800
600
IFAVM
[A] 400
200
DC
180 ° sin
120 °
60 °
30 °
0
0.001
0.01
0.1
1
t [s]
Fig. 1 Surge overload current
IFSM: Crest value, t: duration
105
1
10
t [ms]
Fig. 2 I2t versus time (1-10 ms)
0
0 25 50 75 100 125 150
TC [°C]
Fig. 3 Maximum forward current
at case temperature
1000
800
Ptot 600
[W] 400
200
DC
180 ° sin
120 °
60 °
30 °
RthKA K/W
0.03
0.07
0.12
0.2
0.3
0.4
0.6
0
0 200 400 600 800 0
25 50 75 100 125 150
IFAVM [A]
TA [°C]
Fig. 4 Power dissipation vs. forward current and ambient temperature
10
1: IGT, TVJ = 130°C
2: IGT, TVJ = 25°C
3: IGT, TVJ = -40°C
VG
1
[V]
3
2
1
6
5
4
IGD, TVJ = 130°C
0.1
10-3 10-2 10-1
4: PGM = 20 W
5: PGM = 60 W
6: PGM = 120 W
100 101 102
IG [A]
Fig. 5 Gate trigger characteristics
4000
3000
Ptot
2000
[W]
1000
Circuit
B6
6xMCO450
RthKA K/W
0.01
0.02
0.03
0.045
0.06
0.08
0.12
100
TVJ = 25°C
tgd
10
[µs]
typ.
Limit
0
0 300 600 900 1200 0
IdAVM [A]
25 50 75 100 125 150
TA [°C]
Fig. 6 Single phase rectifier bridge: Power dissipation vs. direct output current
and ambient temperature. R = resistive load, L = inductive load
1
0.01
0.1
1
10
IG [A]
Fig. 7 Gate trigger delay time
IXYS reserves the right to change limits, conditions and dimensions.
© 2017 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20170112g
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