DF75224 Ver la hoja de datos (PDF) - Dynex Semiconductor
Número de pieza
componentes Descripción
Fabricante
DF75224 Datasheet PDF : 7 Pages
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DF752
SURGE RATINGS
Symbol
Parameter
I
Surge (non-repetitive) forward current
FSM
I2t
I2t for fusing
IFSM
Surge (non-repetitive) forward current
I2t
I2t for fusing
Conditions
10ms half sine; with 0% VRRM, Tj = 150oC
10ms half sine; with 50% VRRM, Tj = 150oC
Max. Units
12.0
kA
720 x 103 A2s
9.6
kA
460 x 103 A2s
THERMAL AND MECHANICAL DATA
Symbol
Parameter
Rth(j-c) Thermal resistance - junction to case
Rth(c-h) Thermal resistance - case to heatsink
Tvj
Virtual junction temperature
Tstg
Storage temperature range
-
Clamping force
Conditions
Double side cooled
dc
Single side cooled
Anode dc
Cathode dc
Clamping force 15kN
with mounting compound
Double side
Single side
On-state (conducting)
Min. Max. Units
- 0.036 oC/W
- 0.069 oC/W
- 0.076 oC/W
-
0.01 oC/W
-
0.02 oC/W
-
150
oC
-55 175
oC
13.5 16.5 kN
CHARACTERISTICS
Symbol
Parameter
VFM
Forward voltage
IRRM
Peak reverse current
trr
Reverse recovery time
Q
RA1
Recovered charge (50% chord)
I
Reverse recovery current
RM
K
Soft factor
V
TO
r
T
VFRM
Threshold voltage
Slope resistance
Forward recovery voltage
Conditions
At 2000A peak, Tcase = 25oC
At VRRM, Tcase = 150oC
IF = 1000A, diRR/dt = 100A/µs
Tcase = 150oC, VR = 100V
At Tvj = 150oC
At T = 150oC
vj
di/dt
=
1000A/µs,
T
j
=
125oC
Typ. Max. Units
-
1.8
V
-
60 mA
-
6.0 µs
- 1000 µC
-
330
A
-
-
-
-
0.9
V
-
0.45 mΩ
-
-
V
2/7
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