DG648BH45 Ver la hoja de datos (PDF) - Dynex Semiconductor

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Fabricante

DG648BH45

Gate Turn-off Thyristor

Dynex Semiconductor 

DG648BH45

4.0

tr

3.0

2.0

1.0

0

0

td

Conditions: Tj = 125°C, IFGM = 30A,

CS = 2.0µF, VD = 3000V,

RS = 10Ω, dIT/dt = 300A/µs,

dIFG/dt = 30A/µs,

500

1000

1500

2000

On-state current IT - (A)

Fig.13 Delay time & rise time vs turn-on current

2500

3000

8.0

Conditions:

Tj = 125°C, IT = 2000A,

CS = 2.0µF,

RS = 10 Ohms,

6.0

dI/dt = 300A/µs,

dIFG/dt = 30A/µs,

VD = 3000V

4.0

2.0

tr

td

0

0

20

40

60

80

Peak forward gate current IFGM - (A)

Fig.14 Delay time & rise time vs peak forward gate current

9/19

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