DG648BH45 Ver la hoja de datos (PDF) - Dynex Semiconductor
Número de pieza
componentes Descripción
Fabricante
DG648BH45 Datasheet PDF : 18 Pages
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3000
Conditions:
Tj = 125°C, VDM = VDRM,
dIGQ/dt = 40A/µs
2000
DG648BH45
1000
0
0
1.0
2.0
3.0
4.0
Snubber capacitance CS - (µF)
Fig.3 Maximum dependence of ITCM on CS
0.020
dc
0.015
0.010
0.005
0
0.001
0.01
0.1
1.0
10
Time - (s)
Fig.4 Maximum (limit) transient thermal impedance - double side cooled
40
30
20
10
0
0.0001
0.001
0.01
0.1
1.0
Pulse duration - (s)
Fig.5 Surge (non-repetitive) on-state current vs time
5/19
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