DG648BH45(2000) Ver la hoja de datos (PDF) - Dynex Semiconductor
Número de pieza
componentes Descripción
Fabricante
DG648BH45 Datasheet PDF : 19 Pages
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DG648BH45
4000
3000
Conditions:
Tj = 125˚C, IFGM = 30A,
CS = 2.0µF,
RS = 10Ω,
dIT/dt = 300A/µs,
dIFG/dt = 30A/µs,
2000
VD = 3000V
VD = 2000V
1000
VD = 1000V
0
0
500
1000
1500
2000
2500
3000
On-state current IT - (A)
Fig.10 Turn-on energy vs on-state current
5000
4000
3000
2000
Conditions:
Tj = 125˚C, IT = 2000A,
CS = 2.0µF, RS = 10 Ohms
dI/dt = 300A/µs,
dIFG/dt = 30A/µs
VD = 3000V
VD = 2000V
4000
3000
Conditions:
IT = 2000A,
Tj = 125˚C,
CS = 2.0µF
RS = 10 Ohms
IFGM = 30A,
dIFG/dt = 30A/µs
2000
VD = 3000V
VD = 2000V
1000
VD = 1000V
1000
VD = 1000V
0
0
20
40
60
Peak forward gate current IFGM - (A)
Fig.11 Turn-on energy vs peak forward gate current
0
0
100
200
300
Rate of rise of on-state current dIT/dt - (A/µs)
80
Fig.12 Turn-on energy vs rate of rise of on-state current
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