DG648BH45(2000) Ver la hoja de datos (PDF) - Dynex Semiconductor

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componentes Descripción

Fabricante

DG648BH45
(Rev.:2000)

Gate Turn-off Thyristor

Dynex Semiconductor 

CHARACTERISTICS

T = 125oC unless stated otherwise

j

Symbol

Parameter

VTM

IDM

IRRM

VGT

IGT

IRGM

EON

td

tr

E

OFF

t

gs

tgf

tgq

Q

GQ

Q

GQT

IGQM

On-state voltage

Peak off-state current

Peak reverse current

Gate trigger voltage

Gate trigger current

Reverse gate cathode current

Turn-on energy

Delay time

Rise time

Turn-off energy

Storage time

Fall time

Gate controlled turn-off time

Turn-off gate charge

Total turn-off gate charge

Peak reverse gate current

DG648BH45

Conditions

At 2000A peak, IG(ON) = 7A d.c.

VDRM = 4500V, VRG = 0V

At VRRM

VD = 24V, IT = 100A, Tj = 25oC

VD = 24V, IT = 100A, Tj = 25oC

V = 16V, No gate/cathode resistor

RGM

VD = 3000V

IT = 2000A, dIT/dt = 300A/µs

IFG = 30A, rise time < 1.0µs

IT = 2000A, VDM = VDRM

Snubber Cap Cs = 2.0µF,

diGQ/dt = 40A/µs

Min. Max. Units

-

3.2

V

-

100 mA

-

50 mA

-

1.0

V

-

3.0

A

-

50 mA

- 3170 mJ

-

1.35 µs

-

3.2

µs

- 10000 mJ

-

20.0 µs

-

2.0

µs

-

22.0 µs

-

6000 µC

- 12000 µC

-

690

A

3/19

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