DG646BH25 Ver la hoja de datos (PDF) - Dynex Semiconductor

Número de pieza

componentes Descripción

Fabricante

DG646BH25

Gate Turn-off Thyristor

Dynex Semiconductor 

DG646BH25

CURVES

2.0

8.0

1.5

6.0

1.0

4.0

VGT

0.5

2.0

IGT

0

0

-50 -25 0 25 50 75 100 125 150

Junction temperature Tj - (˚C)

Fig.1FIMGax1imMuAmXgIMatUe MtrigGgAerTvEoTltRagIGe/GcuErrRenVtOvsLTjuAnGctEio/Cn UteRmRpEerNaTture

4000

Measured under pulse conditions.

IG(ON) = 7A

Half sine wave 10ms

3000

Tj = 25˚C

Tj = 125˚C

2000

1000

0

0

1.0

2.0

3.0

4.0

5.0

Instantaneous on-state voltage VTM - (V)

Fig.2 On-state characteristics

4/19

Share Link: