DG626BH25 Ver la hoja de datos (PDF) - Dynex Semiconductor
Número de pieza
componentes Descripción
Fabricante
DG626BH25 Datasheet PDF : 19 Pages
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DG646BH25
4000
3000
Conditions:
Tj = 125˚C,
CS = 2.0µF,
dIGQ/dt = 40A/µs
VDRM
0.75x VDRM
2000
1000
0.5x VDRM
0
0
500
1000
1500
2000
2500
On-state current IT - (A)
FIG 17 FTiUg.R1N7 TOuFrnF-oEffNeEnRerGgYy vs oOnN-stSatTeAcTuErreCnUt RRENT
5000
4000
Conditions:
Tj = 125˚C,
CS = 2.0µF,
IT = 2000A
VDRM
3000
3000
0.75x VDRM
2000
0.5x VDRM
1000
20
30
40
50
60
70
Rate of rise of reverse gate current dIGQ/dt - (A/µs)
Fig.18 Turn-off energy loss vs rate of rise of reverse gate current
11/19
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