3. Absolute Maximum Ratings ( at Tc= 25C unless otherwise specified )
Items
Symbols
Conditions
Collector-Emitter voltage
VCES
Gate-Emitter voltage
VGES
Collector current
Ic
Ic pulse
-Ic
Continuous
1ms
-Ic pulse
1ms
Collector Power Dissipation
Pc
1 device
Junction temperature
Tj
Storage temperature
Tstg
Isolation voltage(*1)
Mounting Screw Torque (*2)
Viso
AC : 1min.
(*1) All terminals should be connected together when isolation test will be done.
(*2) Recommendable Value : 2.5~3.5 Nm (M5)
Maximum
Ratings
600
+-20
100
200
100
200
400
150
-40~ +125
2500
3.5
Units
V
V
A
W
C
C
V
Nm
4. Electrical characteristics ( at Tj= 25C unless otherwise specified)
Items
Zero gate voltage
Collector current
Gate-Emitter leakage current
Gate-Emitter
threshold voltage
Collector-Emitter
saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time
Turn-off time
Forward on voltage
Reverse recovery time
Symbols
ICES VGE =
IGES VCE =
VGE(th) VCE =
VCE(sat) VGE =
Ic =
Cies VGE =
Coes VCE =
Cres f =
ton Vcc =
tr Ic =
tr(i) VGE =
toff RG =
tf
VF IF =
trr IF =
Conditions
0 V, VCE =
0 V, VGE =
20 V, Ic =
15 V
Tj =
100 A
Tj =
0V
10 V
1 MHz
300 V
100 A
+-15 V
24 ohm
100 A
Tj =
Tj =
100 A
600 V
+-20 V
100 mA
25 C
125 C
25 C
125 C
Characteristics
min. typ. Max.
-
- 1.0
-
- 200
5.5 7.8 8.5
- 2.15 2.6
- 2.3 -
- 10000 -
- 1600 -
- 1100 -
- 0.45 1.2
- 0.25 0.6
- 0.08 -
- 0.40 1.0
- 0.05 0.35
- 1.95 2.7
- 1.8 -
-
- 0.3
Units
mA
nA
V
V
pF
us
V
us
5. Thermal resistance characteristics
Items
Symbols
Conditions
Characteristics
min. typ. Max.
Thermal resistance
Rth(j-c) IGBT
-
- 0.31
(1 device)
FWD
-
- 0.70
Contact Thermal resistance
Rth(c-f) with Thermal Compound (*)
- 0.05 -
* This is the value which is defined mounting on the additional cooling fin with thermal compound.
Units
C/W
MS5F5327
4
13
H04-004-03