DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

VS-60CPH03PBF Ver la hoja de datos (PDF) - Vishay Semiconductors

Número de pieza
componentes Descripción
Fabricante
VS-60CPH03PBF
Vishay
Vishay Semiconductors Vishay
VS-60CPH03PBF Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
www.vishay.com
VS-60CPH03PbF, VS-60CPH03-N3
Vishay Semiconductors
Hyperfast Rectifier, 2 x 30 A FRED Pt®
1
2
3
TO-247AC 3L
Common
cathode
2, Base
1
Anode
1
3
Anode
2
FEATURES
• Hyperfast recovery time
• Low forward voltage drop
• Low leakage current
• 175 °C operating junction temperature
• Designed and qualified according to
JEDEC®-JESD 47
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
PRIMARY CHARACTERISTICS
IF(AV)
2 x 30 A
VR
VF at IF
trr typ.
300 V
0.92 V
See Recovery table
TJ max.
175 °C
Package
TO-247AC 3L
Circuit configuration
Common cathode
DESCRIPTION / APPLICATIONS
300 V series are the state of the art ultrafast recovery
rectifiers designed with optimized performance of forward
voltage drop and ultrafast recovery time.
The planar structure and the platinum doped life time control
guarantee the best overall performance, ruggedness and
reliability characteristics.
These devices are intended for use in the output rectification
stage of SMPS, UPS, DC/DC converters as well as
freewheeling diodes in low voltage inverters and chopper
motor drives.
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Repetitive peak reverse voltage
VRRM
per leg
Average rectified forward current
total device
IF(AV)
Non-repetitive peak surge current per leg
Operating junction and storage temperatures
IFSM
TJ, TStg
TEST CONDITIONS
TC = 143 °C
TJ = 25 °C, tp = 10 ms
MAX.
300
30
60
300
-65 to +175
UNITS
V
A
°C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Breakdown voltage,
blocking voltage
VBR,
VR
IR = 100 μA
Forward voltage
IF = 30 A
VF
IF = 30 A, TJ = 125 °C
Reverse leakage current
VR = VR rated
IR
TJ = 125 °C, VR = VR rated
Junction capacitance
CT
VR = 300 V
Series inductance
LS
Measured lead to lead 5 mm from package body
MIN.
300
-
-
-
-
-
-
TYP.
-
1.08
0.92
0.05
20
70
3.5
MAX.
-
1.25
1.00
60
300
-
-
UNITS
V
µA
pF
nH
Revision: 10-Jul-15
1
Document Number: 94500
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]