5N60G-X-TF3-T Ver la hoja de datos (PDF) - Unisonic Technologies

Número de pieza

componentes Descripción

Fabricante

5N60G-X-TF3-T

4.5 Amps, 600/650 Volts N-CHANNEL MOSFET

Unisonic Technologies 

5N60

Power MOSFET

„ ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

5N60-A

5N60-B

600

VDSS

650

V

Gate-Source Voltage

VGSS

±30

V

Avalanche Current (Note 2)

IAR

4.5

A

Continuous Drain Current

ID

4.5

A

Pulsed Drain Current (Note 2)

IDM

18

A

Avalanche Energy

Single Pulsed (Note 3)

EAS

Repetitive (Note 2)

EAR

210

mJ

10

Peak Diode Recovery dv/dt (Note 4)

dv/dt

4.5

V/ns

Power Dissipation

TO-220

TO-220F/TO-220F1

PD

100

W

36

TO-251 / TO-252

54

Junction Temperature

Operation Temperature

TJ

+150

°C

TOPR

-55 ~ +150

°C

Storage Temperature

TSTG

-55 ~ +150

°C

Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Pulse width limited by TJ(MAX)

3. L = 18.9mH, IAS = 4.5 A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C

4. ISD ≤ 4.5A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C

„ THERMAL DATA

Junction-to-Ambient

Junction-to-Case

PARAMETER

TO-220

TO-220F/TO-220F1

TO-251 / TO-252

TO-220

TO-220F/TO-220F1

TO-251 / TO-252

SYMBOL

θJA

θJC

RATINGS

62.5

62.5

160

1.25

3.47

2.3

UNIT

°C/W

°C/W

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

2 of 6

QW-R502-065,F

Share Link: