50RIA60M Ver la hoja de datos (PDF) - Vishay Semiconductors
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50RIA60M Datasheet PDF : 7 Pages
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50RIA Series
Medium Power Thyristors Vishay High Power Products
(Stud Version), 50 A
SWITCHING
PARAMETER
Maximum rate of
rise of turned-on current
Typical delay time
Typical turn-off time
SYMBOL
TEST CONDITIONS
VALUES
VDRM ≤ 600 V
VDRM ≤ 1600 V
dI/dt
td
tq
TC = 125 °C, VDM = Rated VDRM,
200
Gate pulse = 20 V, 15 Ω, tp = 6 µs, tr = 0.1 µs maximum
ITM = (2 x rated dI/dt) A
100
TC = 25 °C, VDM = Rated VDRM, ITM = 10 A dc resistive circuit
0.9
Gate pulse = 10 V, 15 Ω source, tp = 20 µs
TC = 125 °C, ITM = 50 A, reapplied dV/dt = 20 V/µs
110
dIr/dt = - 10 A/µs, VR = 50 V
UNITS
A/µs
µs
BLOCKING
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum critical rate of rise of
off-state voltage
dV/dt
TJ = TJ maximum linear to 100 % rated VDRM
TJ = TJ maximum linear to 67 % rated VDRM
Note
(1) Available with dV/dt = 1000 V/µs, to complete code add S90 i.e. 50RIA120S90
VALUES
200
500 (1)
UNITS
V/µs
TRIGGERING
PARAMETER
Maximum peak gate power
Maximum average gate power
Maximum peak positive gate current
Maximum peak positive gate voltage
Maximum peak negative gate voltage
DC gate current required to trigger
DC gate voltage required to trigger
DC gate current not to trigger
DC gate voltage not to trigger
SYMBOL
PGM
PG(AV)
IGM
+VGM
-VGM
IGT
VGT
IGD
VGD
TEST CONDITIONS
VALUES
TJ = TJ maximum, tp ≤ 5 ms
10
2.5
2.5
20
10
TJ = - 40 °C
TJ = 25 °C
TJ = 125 °C
TJ = - 40 °C
250
Maximum required gate trigger
100
current/voltage are the lowest
50
value which will trigger all units 6 V
anode to cathode applied
3.5
TJ = 25 °C
2.5
TJ = TJ maximum,
Maximum gate current/voltage not
5.0
VDRM = Rated voltage to trigger is the maximum value
which will not trigger any unit with
TJ = TJ maximum
rated VDRM anode to cathode
0.2
applied
UNITS
W
A
V
mA
V
mA
V
Document Number: 93711
Revision: 19-Sep-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
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