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50MT060WHA

HALF-BRIDGE IGBT MTP Warp Speed IGBT

International Rectifier 

Bulletin I27190 02/05

"HALF-BRIDGE" IGBT MTP

Features

• Gen. 4 Warp Speed IGBT Technology

• HEXFRED TM Antiparallel Diodes with

UltraSoft Reverse Recovery

• Very Low Conduction and Switching Losses

• Optional SMD Thermistor (NTC)

• Al2O3 DBC

• Very Low Stray Inductance Design for

High Speed Operation

• UL E78996 approved

50MT060WHA

50MT060WHTA

Warp Speed IGBT

VCES = 600V

VCE(on) typ. = 2.3V @

VGE = 15V, IC = 50A

TC = 25°C

Benefits

• Optimized for Welding, UPS and SMPS

Applications

• Operating Frequencies > 20 kHz Hard

Switching, >200 kHz Resonant Mode

• Low EMI, requires Less Snubbing

• Direct Mounting to Heatsink

• PCB Solderable Terminals

• Very Low Junction-to-Case Thermal

Resistance

MMTP

Absolute Maximum Ratings

Parameters

VCES

IC

ICM

ILM

IF

IFM

VGE

VISOL

PD

Collector-to-Emitter Voltage

Continuos Collector Current

Pulsed Collector Current

@ TC = 25°C

@ TC = 109°C

Peak Switching Current

Diode Continuous Forward Current

Peak Diode Forward Current

@ TC = 109°C

Gate-to-Emitter Voltage

RMS Isolation Voltage, Any Terminal to Case, t = 1 min

Maximum Power Dissipation

@ TC = 25°C

@ TC = 100°C

www.irf.com

Max

600

114

50

350

350

34

200

± 20

2500

658

263

Units

V

A

V

W

1

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