4N65K Ver la hoja de datos (PDF) - Unisonic Technologies

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Fabricante

4N65K

N-CHANNEL POWER MOSFET

Unisonic Technologies 

4N65K

Power MOSFET

„ ABSOLUTE MAXIMUM RATINGS (TC = 25°С, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

VDSS

650

V

Gate-Source Voltage

VGSS

±30

V

Avalanche Current (Note2)

IAR

4.4

A

Drain Current

Continuous

ID

Pulsed (Note2)

IDM

4.0

A

16

A

Avalanche Energy

Single Pulsed (Note3)

EAS

Repetitive (Note2)

EAR

110

mJ

10.6

mJ

Peak Diode Recovery dv/dt (Note4)

dv/dt

4.5

V/ns

Power Dissipation

PD

106

W

Junction Temperature

TJ

+150

°С

Operating Temperature

TOPR

-55 ~ +150

°С

Storage Temperature

TSTG

-55 ~ +150

°С

Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Repetitive Rating : Pulse width limited by maximum junction temperature

3. L = 30mH, IAS = 4A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C

4. ISD≤4.4A, di/dt ≤200A/μs, VDD≤BVDSS, Starting TJ = 25°C

„ THERMAL DATA

PARAMETER

Junction to Ambient

Junction to Case

SYMBOL

θJA

θJc

RATINGS

62.5

1.18

UNIT

°С/W

°С/W

www.DataSheet.net/

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

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QW-R502-840.A

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