4N600T Ver la hoja de datos (PDF) - Unspecified
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4N600T Datasheet PDF : 2 Pages
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Bay Linear
Inspire the Linear Power
N-Channel Field Effect Transistor
4N600(3600)
Description
The Bay Linear n-channel power field effect transistors are
produced using high cell density DMOS technology , These
devices are particularly suited for high voltage applications
such as automotive and other battery powered circuits where
fast switching, low in-line power loss and resistance to
transistors are needed.
The TO-220 is offered in a 3-pin is universally preferred for all
commercial-industrial applications at power dissipation level
to approximately to 50 watts. Also, available in a D2 surface
mount power package with a power dissipation up to 2 Watts
Features
• Critical DC Electrical parameters
specified at elevated Temp.
• Rugged internal source-drain diode
can eliminate the need for external
Zener diode transient suppresser
• Super high density cell design for
extremely low RDS(ON)
VDSS = 600V
RDS (ON) = 1.9 Ω
ID = 4.0A
Ordering Information
Device
Package
4N600T
4N600S
TO-220
TO-263 ( D2 )
Temp.
0 to 150°C
0 to 150°C
Absolute Maximum Rating
Symbol
Parameter
ID (TC=25°C)
ID (TC=100°C)
VGSV
PD
TJ
TSTG
Drain Current
-Continues
-Pulsed
Gate Source Voltage
Total Power Dissipation @ TC =25°C
Derate above 25°C
Operating and Storage
Temperature Range
Max
4.0
2.5
16
±20
75
0.59
-55 to 150
Unit
A
V
W
W/°C
°C
Bay Linear, Inc 2478 Armstrong Street, Livermore, CA 94550 Tel: (925) 989-7144, Fax: (925) 940-9556
www.baylinear.com
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