H11A2SM(2007) Ver la hoja de datos (PDF) - Fairchild Semiconductor
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H11A2SM Datasheet PDF : 9 Pages
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Electrical Characteristics (Continued) (TA = 25°C unless otherwise specified)
Transfer Characteristics
Symbol
Parameter
Test Conditions
Device
Min. Typ.* Max. Unit
DC CHARACTERISTICS
CTR Current Transfer Ratio, IF = 10mA, VCE = 10V
4N35M, 4N36M, 100
%
Collector to Emitter
4N37M
H11A1M
50
H11A5M
30
4N25M, 4N26M 20
H11A2M, H11A3M
4N27M, 4N28M 10
H11A4M
IF = 10mA, VCE = 10V, 4N35M, 4N36M, 40
TA = -55°C
4N37M
IF = 10mA, VCE = 10V, 4N35M, 4N36M, 40
TA = +100°C
4N37M
VCE (SAT) Collector-Emitter
Saturation Voltage
IC = 2mA, IF = 50mA
4N25M, 4N26M,
4N27M, 4N28M,
0.5 V
IC = 0.5mA, IF = 10mA 4N35M, 4N36M,
0.3
4N37M
H11A1M, H11A2M,
0.4
H11A3M, H11A4M,
H11A5M
AC CHARACTERISTICS
TON Non-Saturated
IF = 10mA, VCC = 10V, 4N25M, 4N26M,
2
µs
Turn-on Time
RL = 100Ω (Fig. 11)
4N27M, 4N28M,
H11A1M, H11A2M,
H11A3M, H11A4,
H11A5M
IC = 2mA, VCC = 10V,
RL = 100Ω (Fig. 11)
4N35M, 4N36M,
4N37M
2
10 µs
TOFF Turn-off Time
IF = 10mA, VCC = 10V, 4N25M, 4N26M,
2
µs
RL = 100Ω (Fig. 11)
4N27M, 4N28M,
H11A1M, H11A2M,
H11A3M, H11A4M,
H11A5M
IC = 2mA, VCC = 10V,
RL = 100Ω (Fig. 11)
4N35M, 4N36M,
4N37M
2
10
* Typical values at TA = 25°C
©2005 Fairchild Semiconductor Corporation
4NXXM, H11AXM Rev. 1.0.0
3
www.fairchildsemi.com
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