H11A2M(2007) Ver la hoja de datos (PDF) - Fairchild Semiconductor
Número de pieza
componentes Descripción
Fabricante
H11A2M Datasheet PDF : 9 Pages
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Absolute Maximum Ratings (TA = 25°C unless otherwise specified)
Symbol
Parameter
TOTAL DEVICE
TSTG
TOPR
TSOL
PD
Storage Temperature
Operating Temperature
Wave solder temperature (see page 8 for reflow solder profile)
Total Device Power Dissipation @ TA = 25°C
Derate above 25°C
EMITTER
IF
VR
IF(pk)
PD
DC/Average Forward Input Current
Reverse Input Voltage
Forward Current – Peak (300µs, 2% Duty Cycle)
LED Power Dissipation @ TA = 25°C
Derate above 25°C
DETECTOR
VCEO
VCBO
VECO
PD
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Collector Voltage
Detector Power Dissipation @ TA = 25°C
Derate above 25°C
Value
-55 to +150
-55 to +100
260 for 10 sec
250
2.94
60
6
3
120
1.41
30
70
7
150
1.76
Units
°C
°C
°C
mW
mA
V
A
mW
mW/°C
V
V
V
mW
mW/°C
Electrical Characteristics (TA = 25°C unless otherwise specified)
Individual Component Characteristics
Symbol
Parameter
Test Conditions
EMITTER
VF
IR
DETECTOR
Input Forward Voltage
Reverse Leakage Current
BVCEO
BVCBO
BVECO
ICEO
ICBO
CCE
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Collector Breakdown Voltage
Collector-Emitter Dark Current
Collector-Base Dark Current
Capacitance
IF = 10mA
VR = 6.0V
IC = 1.0mA, IF = 0
IC = 100µA, IF = 0
IE = 100µA, IF = 0
VCE = 10V, IF = 0
VCB = 10V
VCE = 0V, f = 1 MHz
Min. Typ.* Max. Unit
1.18 1.50
V
0.001 10
µA
30
100
V
70
120
V
7
10
V
1
50
nA
20
nA
8
pF
Isolation Characteristics
Symbol Characteristic
VISO
RISO
CISO
Input-Output Isolation Voltage
Isolation Resistance
Isolation Capacitance
*Typical values at TA = 25°C
Test Conditions
f = 60Hz, t = 1 sec
VI-O = 500 VDC
VI-O = &, f = 1MHz
Min. Typ.* Max.
7500
1011
0.2
2
Units
Vac(pk)
Ω
pF
©2005 Fairchild Semiconductor Corporation
4NXXM, H11AXM Rev. 1.0.0
2
www.fairchildsemi.com
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