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40TPS08APBF Ver la hoja de datos (PDF) - Vishay Semiconductors

Número de pieza
componentes Descripción
Fabricante
40TPS08APBF
Vishay
Vishay Semiconductors Vishay
40TPS08APBF Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
40TPS...APbF/40TPS...PbF High Voltage Series
Vishay High Power Products Phase Control SCR, 35 A
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average on-state current
Maximum continuous RMS
on-state current as AC switch
IT(AV)
IT(RMS)
Maximum peak, one-cycle
non-repetitive surge current
ITSM
Maximum I2t for fusing
I2t
Maximum I2t for fusing
Low level value of threshold voltage
High level value of threshold voltage
Low level value of on-state slope resistance
High level value of on-state slope resistance
Maximum peak on-state voltage
Maximum rate of rise of turned-on current
Maximum holding current
Maximum latching current
I2t
VT(TO)1
VT(TO)2
rt1
rt2
VTM
dI/dt
IH
IL
Maximum reverse and direct leakage current
IRRM/IDRM
Maximum rate of rise of off-state voltage 40TPS08
Maximum rate of rise of off-state voltage 40TPS12
dV/dt
TEST CONDITIONS
TC = 79 °C, 180° conduction half sine wave
VALUES UNITS
35
55
10 ms sine pulse, rated VRRM applied
10 ms sine pulse, no voltage reapplied
10 ms sine pulse, rated VRRM applied
10 ms sine pulse, no voltage reapplied
t = 0.1 to 10 ms, no voltage reapplied
Initial TJ =
TJ maximum
TJ = 125 °C
110 A, TJ = 25 °C
TJ = 25 °C
TJ = 25 °C
TJ = 125 °C
VR = Rated VRRM/VDRM
TJ = TJ maximum, linear to 80 % VDRM, Rg-k = Open
500
600
1250
1760
12 500
1.02
1.23
9.74
7.50
1.85
100
150
300
0.5
10
500
1000
A
A2s
A2s
V
mΩ
V
A/µs
mA
V/µs
TRIGGERING
PARAMETER
Maximum peak gate power
Maximum average gate power
Maximum peak gate current
Maximum peak negative gate voltage
Maximum required DC gate
voltage to trigger
Maximum required DC gate current to trigger
Maximum DC gate voltage not to trigger
Maximum DC gate current not to trigger
SYMBOL
PGM
PG(AV)
IGM
- VGM
VGT
IGT
VGD
IGD
TEST CONDITIONS
TJ = - 40 °C
TJ = 25 °C
TJ = 125 °C
Anode supply = 6 V
resistive load
TJ = - 40 °C
TJ = 25 °C
TJ = 125 °C
TJ = 25 °C, for 40TPS08APbF and 40TPS12APbF
TJ = 125 °C, VDRM = Rated value
VALUES UNITS
10
W
2.5
2.5
A
10
V
4.0
2.5
V
1.7
270
150
mA
80
40
0.25
V
6
mA
www.vishay.com
2
For technical questions, contact: diodes-tech@vishay.com
Document Number: 94388
Revision: 12-Sep-08

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