3N80G-TF1-T Ver la hoja de datos (PDF) - Unisonic Technologies
Número de pieza
componentes Descripción
Fabricante
3N80G-TF1-T Datasheet PDF : 6 Pages
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3N80
Power MOSFET
ELECTRICAL CHARACTERISTICS(Cont.)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Diode Forward Voltage(Note 1)
VSD
ISD=3A ,VGS=0V
1.6 V
Source-Drain Current
ISD
2.5 A
Source-Drain Current (Pulsed)
ISDM
10 A
Reverse Recovery Current
IRRM
Body Diode Reverse Recovery Time
tRR
Body Diode Reverse Recovery Charge
QRR
Note: 1.Pulse width=300μs, Duty cycle≦1.5%
ISD=3A, di/dt=100A/μs,
VDD=50V, TJ=25°C
8.4
A
384
ns
1600
nC
Note: 2.COSS(EQ) is defined as constant equivalent capacitance giving the same charging time as COSS when VDS
increases from 0to 80% VDSS.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 6
QW-R502-283.D
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