3N65ZG-TF3-T Ver la hoja de datos (PDF) - Unisonic Technologies

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Fabricante

3N65ZG-TF3-T

3A, 650V N-CHANNEL POWER MOSFET

Unisonic Technologies 

3N65Z

„ ELECTRICAL CHARACTERISTICS(Cont.)

PARAMETER

SYMBOL

TEST CONDITIONS

SWITCHING CHARACTERISTICS

Turn-On Delay Time

tD(ON)

Turn-On Rise Time

Turn-Off Delay Time

tR

tD(OFF)

VDD = 325V, ID = 3.0A,

RG = 25Ω (Note 1, 2)

Turn-Off Fall Time

tF

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

QG

QGS

QDD

VDS= 520V,ID= 3.0A,

VGS= 10 V (Note 1, 2)

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Drain-Source Diode Forward Voltage

VSD

VGS = 0 V, IS = 3.0 A

Maximum Continuous Drain-Source Diode

Forward Current

IS

Maximum Pulsed Drain-Source Diode

Forward Current

ISM

Reverse Recovery Time

Reverse Recovery Charge

trr

VGS = 0 V, IS = 3.0 A,

QRR

dIF/dt = 100A/μs (Note 1)

Notes: 1. Pulse Test: Pulse Width≤300μs, Duty Cycle≤2%

2. Essentially independent of operating temperature.

Power MOSFET

MIN TYP MAX UNIT

10 30 ns

30 70 ns

20 50 ns

30 70 ns

10 13 nC

2.7

nC

4.9

nC

1.4 V

3.0 A

12 A

210

ns

1.2

μC

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

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QW-R502-746.A

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